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| PROFET(R) Data Sheet BTS660P Smart Highside High Current Power Switch Reversave * Reverse battery protection by self turn on of power MOSFET * Overload protection * Current limitation * Short circuit protection * Over temperature protection * Over voltage protection (including load dump) * Clamp of negative voltage at output * Fast deenergizing of inductive loads 1) * Low ohmic inverse current operation * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbb protection2) * Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Vbb(AZ) 70 V VON(CL) 62 V Vbb(on) 5.0 ... 58 V RON 9 m IL(ISO) 44 A IL(SC) 90 A IL : IIS 13 000 TO 220-7SMD Application 7 1 * Power switch with current sense diagnostic feedback for up to 48 V DC grounded loads * Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits 7 Standard SMD 1 General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 4 & Tab R Voltage source Overvoltage protection Current limit Gate protection bb + V bb Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads Output Voltage detection OUT 1,2,6,7 IL Current Sense Load 3 IN ESD Logic I IN Temperature sensor I IS IS PROFET Load GND VIN V IS Logic GND 5 R IS 1 2 ) ) With additional external diode. Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG Page 1 2003-Oct-01 Data Sheet BTS660P Pin 1 2 3 4 Symbol OUT OUT IN Vbb O O I Function Output to the load. The pins 1,2,6 and 7 must be shorted with each other 3 especially in high current applications! ) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection 4 instead of this pin ). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3) Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3) + 5 6 7 IS OUT OUT S O O Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (over voltage protection see page 4) Supply voltage for full short circuit protection, (EAS limitation see diagram on page 10) Tj,start =-40 ...+150C: Load current (short circuit current, see page 5) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI5) = 2 , RL = 0.23 , td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const., IL = 20 A, ZL = 6 mH, 0 , see diagrams on page 10 Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k Symbol Vbb Vbb IL VLoad dump ) Tj Tstg Ptot EAS VESD IIN IIS 6 Values 62 58 self-limited 80 -40 ...+150 -55 ...+150 170 1.2 4.0 +15 , -250 +15 , -250 Unit V V A V C W J kV mA Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 and 8 3 ) ) ) ) 4 5 6 Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.7 m (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Infineon Technologies AG Page 2 2003-Oct-01 Data Sheet BTS660P Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---7 chip - case: RthJC ) junction - ambient (free air): RthJA SMD version, device on PCB 8): Values typ max -- 0.75 60 -33 -- Unit K/W Electrical Characteristics Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,2,6,7, see measurement circuit page 7) IL = 20 A, Tj = 25 C: VIN = 0, IL = 20 A, Tj = 150 C: IL = 80 A, Tj = 150 C: Vbb =6V, IL =20A, Tj =150C: 9) Nominal load current (Tab to pins 1,2,6,7) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 C 10) Nominal load current 9), device on PCB 8) TA = 85 C, Tj 150 C VON 0.5 V, Maximum load current in resistive range (Tab to pins 1,2,6,7) VON = 1.8 V, Tc = 25 C: see diagram on page 13 VON = 1.8 V, Tc = 150 C: 11) Turn-on time IIN to 90% VOUT: to 10% VOUT: Turn-off time IIN RL = 1 , Tj =-40...+150C Slew rate on 11) (10 to 30% VOUT ) RL = 1 Slew rate off 11) (70 to 40% VOUT ) RL = 1 RON -- RON(Static) IL(ISO) 38 7.2 14.6 -17 44 9 17 17 22 -- m A IL(NOM) IL(Max) 9.9 185 105 50 30 11.1 --- ---- A A ton toff dV/dton -dV/dtoff --1.5 1.9 400 110 2.2 2.6 s 1.0 1.1 V/s V/s 7 8 Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included! Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. 9) not subject to production test, specified by design 10) TJ is about 105C under these conditions. 11) See timing diagram on page 14. ) ) Infineon Technologies AG Page 3 2003-Oct-01 Data Sheet BTS660P Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Inverse Load Current Operation On-state resistance (Pins 1,2,6,7 to pin 4) VbIN = 12 V, IL = - 20 A Tj = 25 C: RON(inv) see diagram on page 10 Tj = 150 C: Nominal inverse load current (Pins 1,2,6,7 to Tab) IL(inv) VON = -0.5 V, Tc = 85 C Drain-source diode voltage (Vout > Vbb) -VON IL = - 20 A, IIN = 0, Tj = +150C Operating Parameters Operating voltage (VIN = 0) 12) Under voltage shutdown 13)14) Under voltage start of charge pump see diagram page 15 Over voltage protection 15) Tj =-40C: Ibb = 15 mA Tj = 25...+150C: Standby current Tj =-40...+25C: IIN = 0, Vbb=35V Tj = 150C: -50 -- 7.2 14.6 60 0.6 9 17 -0.7 m A mV Vbb(on) VbIN(u) VbIN(ucp) VbIN(Z) Ibb(off) 5.0 1.5 3.0 68 70 --- -3.0 4.5 -72 15 25 58 4.5 6.0 --25 50 V V V V A ) If the device is turned on before a V -decrease, the operating voltage range is extended down to VbIN(u). bb For the voltage range 0..58 V the device is fully protected against overtemperature and short circuit. 13) not subject to production test, specified by design 14) VbIN = Vbb - VIN see diagram on page 15. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT Vbb - 3 V. 15) See also VON(CL) in circuit diagram on page 9. 12 Infineon Technologies AG Page 4 2003-Oct-01 Data Sheet BTS660P Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Protection Functions16) Short circuit current limit (Tab to pins 1,2,6,7) VON = 24 V, time until shutdown max. 300 s Tc =-40C: see page 8 and 13 Tc =25C: Tc =+150C: Short circuit shutdown delay after input current positive slope, VON > VON(SC) 17) min. value valid only if input "off-signal" time exceeds 30 s IL(SC) IL(SC) IL(SC) td(SC) --50 80 62 -150 -- 90 90 80 -65 6 -10 180 --350 72 ---- A s V V C K Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. over voltage) IL= 40 mA Short circuit shutdown detection voltage 17) (pin 4 to pins 1,2,6,7) VON(CL) VON(SC) Tjt Thermal overload trip temperature Thermal hysteresis Tjt Reverse Battery Reverse battery voltage 18) -Vbb On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25 C: RON(rev) Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 k Tj = 150 C: Integrated resistor in Vbb line Tj = 25 C: Rbb Tj =150C: --90 105 -8.8 -120 125 42 10.5 20 135 150 V m 16 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 17) not subject to production test, specified by design 18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To reduce the power dissipation at the integrated Rbb resistor an input resistor is recommended as described on page 9. Infineon Technologies AG Page 5 2003-Oct-01 Data Sheet BTS660P Parameter and Conditions at Tj = -40 ... +150 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Diagnostic Characteristics Current sense ratio, static on-condition, kILIS = IL : IIS, VON < 1.5 V 19), VIS IL = 80 A,Tj =-40C: kILIS Tj =25C: Tj =150C: IL = 20 A,Tj =-40C: Tj =25C: Tj =150C: IL = 10 A,Tj =-40C: Tj =25C: Tj =150C: IL = 4 A,Tj =-40C: Tj =25C: Tj =150C: IIS,lim IIN = 0, IIS=0 (e.g. during deenergizing of inductive loads): Sense current saturation Current sense leakage current IIN = 0 IIS(LL) VIN = 0, IL < 0: IIS(LH) Current sense over voltage protection Tj =-40C: VbIS(Z) Ibb = 15 mA Tj = 25...+150C: 20) Current sense settling time ts(IS) 11 400 11 400 11 000 11 000 11 000 11 000 10 500 10 500 11 000 9 000 10 000 10 800 -6.5 --68 70 -- 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 13 000 ---2 -72 -- 15 400 14 600 14 200 16 000 15 000 14 500 17 000 15 500 15 000 22 000 18 500 16 000 --0.5 65 --500 mA A V s Input Input and operating current (see diagram page 13) IN grounded (VIN = 0) IIN(on) IIN(off) --- 0.8 -- 1.5 80 mA A Input current for turn-off 21) 19 If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 20) not subject to production test, specified by design 21) We recommend the resistance between IN and GND to be less than 0.5 k for turn-on and more than 500k for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. ) Infineon Technologies AG Page 6 2003-Oct-01 Data Sheet BTS660P Truth Table Input current level Normal operation Very high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current L H H H L H L H L H L H L L H Output level L H H H L L L L H H Z23) H L H H Current Sense IIS 0 nominal IIS, lim 0 0 0 0 0 0 L = "Low" Level H = "High" Level Over temperature reset by cooling: Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14) Terms I bb VbIN 4 Vbb IL V bb RIN V IN RON measurement layout VON OUT l 5.5mm 3 IN PROFET IS 5 1,2,6,7 I IN VbIS VIS I IS DS R IS Vbb force VOUT Out Force Sense contacts contacts (both out pins parallel) Typical RON for SMD version is about 0.2 m less than straight leads due to l 2 mm Two or more devices can easily be connected in parallel to increase load current capability. 22 23 ) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. ) Power Transistor "OFF", potential defined by external impedance. Infineon Technologies AG Page 7 2003-Oct-01 Data Sheet BTS660P Input circuit (ESD protection) V bb Current sense status output Vbb R bb ZD V V bIN ZD R bb V Z,IS Z,IN IS IN I IN IIS R IS VIS Short circuit detection VZ,IS = 74 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be driven only by the internal circuit as long as Vout - VIS > 5 V. If you want measure load currents up to IL(M), RIS When the device is switched off (IIN = 0) the voltage Vbb - 5 V between IN and GND reaches almost Vbb. Use a should be less than . IL(M) / Kilis bipolar or MOS transistor with appropriate breakdown Note: For large values of RIS the voltage VIS can reach voltage as driver. almost Vbb. See also over voltage protection. VZ,IN = 74 V (typ). If you don't use the current sense output in your application, you can leave it open. V IN Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 s). + Vbb Inductive and over voltage output clamp + Vbb VZ1 V ON VON OUT OUT Logic unit Short circuit detection PROFET IS V OUT VON is clamped to VON(Cl) = 62 V typ Infineon Technologies AG Page 8 2003-Oct-01 Data Sheet BTS660P Over voltage protection of logic part + Vbb V R IN Z,IN Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 70 V or VZb < 42 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. V Z,IS R bb IN Logic V OUT Version a: V IS PROFET RV Signal GND bb V IN R IS V Z,VIS bb OUT PROFET Rbb = 120 typ., VZ,IN = VZ,IS = 74 V typ., RIS = 1 k nominal. Note that when over voltage exceeds 79 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. IS V ZL Reverse battery protection - Vbb R bb Version b: V IN bb IN Vbb PROFET OUT OUT R IN Logic IS Power Transistor IS DS R IS RV Power GND RL V Zb D Signal GND RV 1 k, RIS = 1 k nominal. Add RIN for reverse battery protection in applications with Vbb above 16V18); 1 1 1 0.1A + + = if DS RIN RIS RV |Vbb| - 12V 1 0.1A is not used (or = if DS is used). RIN |Vbb| - 12V To minimize power dissipation at reverse battery operation, the overall current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV. recommended value: Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Version c: Sometimes a necessary voltage clamp is given by non inductive loads RL connected to the same switch and eliminates the need of clamping circuit: V bb IN Vbb PROFET OUT RL IS Infineon Technologies AG Page 9 2003-Oct-01 Data Sheet BTS660P Inverse load current operation Vbb Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150C, Vbb = 40 V, RL = 0 V bb + IN - IL PROFET IS OUT 10000 - V OUT + V IN V IS IIS R IS - 1000 The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! 100 10 1 10 100 1000 Inductive load switch-off energy dissipation E bb E AS V V bb ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL L [H] I [A] Externally adjustable current limit If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by IS*RIS . After a delay time defined by RV*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function. Vbb V bb { RIS ER Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L IL*RL EAS= (V + |VOUT(CL)|) ln (1+ |V ) 2*RL bb OUT(CL)| IN Signal RV 2 IN PROFET OUT IS Rload T1 Signal GND CV T2 R IS Power GND Infineon Technologies AG Page 10 2003-Oct-01 Data Sheet BTS660P Options Overview Type BTS 660P X X X X 25 X) Over temperature protection with hysteresis Tj >150 C, latch function24) Tj >150 C, with auto-restart on cooling Short circuit to GND protection switches off when VON>6 V typ. (when first turned on after approx. 180 s) Over voltage shutdown Output negative voltage transient limit to Vbb - VON(CL) to VOUT = -15 V typ ) Latch except when V -V bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 25) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output. 24 Infineon Technologies AG Page 11 2003-Oct-01 Data Sheet BTS660P Characteristics Current sense versus load current: IIS = f(IL), TJ= -40 ... +150 C IIS [mA] 7 6 5 4 3 min 2 1 0 0 20 40 60 80 12000 max 16000 max Current sense ratio: KILIS = f(IL), Tj= 25C 20000 18000 14000 typ min 10000 8000 0 20 40 60 80 IL [A] kilis IL [A] Current sense ratio: KILIS = f(IL), Tj= -40C kilis Current sense ratio: KILIS = f(IL), Tj= 150C kilis 24000 20000 22000 20000 18000 16000 14000 12000 10000 8000 0 20 40 60 80 IL [A] IL [A] 10000 0 20 40 60 80 18000 max 16000 max typ 14000 typ min 12000 min Infineon Technologies AG Page 12 2003-Oct-01 Data Sheet BTS660P Typ. current limitation characteristic IL = f (VON, Tj ) IL [A] 400 350 300 250 200 150 100 T j = -40C 50 0 0 VON(FB)5(Fold Back) 10 15 20 Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] 1.6 1.4 VON>V ON(SC) only for t < t d(SC) (otherwise immediate shutdown) 1.2 1.0 0.8 0.6 0.4 150C 25C 0.2 0 0 20 40 60 80 VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance RON = f (Vbb, Tj ); IL = 20 A; VIN = 0 RON [mOhm] VbIN [V] 18 16 14 12 10 8 6 4 0 5 10 Tj = 150C 85C 25C -40C static dynamic 15 40 Vbb [V] Infineon Technologies AG Page 13 2003-Oct-01 Data Sheet BTS660P Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2c: Switching an inductive load: IIN IIN VOUT 90% t on dV/dton 10% t off dV/dtoff VOUT IL tslc(IS) t slc(IS) IL Load 1 Load 2 IIS t t IIS tson(IS) t soff(IS) The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3d: Short circuit: shut down by short circuit detection, reset by IIN = 0. Figure 2b: Switching motors and lamps: IIN IIN IL IL(SCp) VOUT td(SC) IIL IIS VOUT>>0 VOUT=0 t IIS t Shut down remains latched until next reset via input. Sense current saturation can occur at very high inrush currents (see IIS,lim on page 6). Infineon Technologies AG Page 14 2003-Oct-01 Data Sheet BTS660P Figure 4e: Overtemperature Reset if Tj IIS VOUT Auto Restart Tj t Figure 6f: Undervoltage restart of charge pump, overvoltage clamp VOUT VIN = 0 6 4 dynamic, short Undervoltage not below VbIN(u) VON(CL) 2 IIN = 0 V ON(CL) 0 0 V bIN(u) 4 V bIN(ucp) Infineon Technologies AG Page 15 2003-Oct-01 Data Sheet BTS660P Package and Ordering Code All dimensions in mm TO-220-7-3 BTS660P Ordering code Q67060-S6309 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings TO 220-7SMD, Opt. E3180 Ordering code BTS660P E3180A T&R: Q67060-S6310 Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Footprint: 10.8 9.4 16.15 4.6 0.47 0.8 8.42 Infineon Technologies AG Page 16 2003-Oct-01 |
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